| 64Mb DDR |
| Part No. |
Organization |
Speed Grade |
Voltage |
Package |
Status* |
RoHS |
| W9464G6IH |
4Mx16 |
4 Banks |
-4 |
250 MHz |
CL3/CL4 |
2.6V±0.1V |
Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant |
N |
Y |
| -5/-5I |
200 MHz |
CL3 |
2.5V±0.2V |
| -6/-6I |
166 MHz |
CL2.5 |
| W9464G6JH |
4Mx16 |
4 Banks |
-4 |
250 MHz |
CL3/CL4 |
2.4V~2.7V |
Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant |
P |
Y |
| -5 |
200 MHz |
CL3 |
2.5V±0.2V |
| * Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life, N=Not recommended for new design. |
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| 128Mb DDR |
| Part No. |
Organization |
Speed Grade |
Voltage |
Package |
Status* |
RoHS |
| W9412G6IH |
8Mx16 |
4 Banks |
-4 |
250 MHz |
CL3/CL4 |
2.5V ±0.1V |
Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant |
N |
Y |
| -5/-5I |
200 MHz |
CL3 |
2.5V±0.2V |
| -6/-6I |
166 MHz |
CL2.5 |
| W9412G6JH |
8Mx16 |
4 Banks |
-4 |
250 MHz |
CL3/CL4 |
2.4V~2.7V |
Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant |
P |
Y |
| -5 |
200 MHz |
CL3 |
2.5V±0.2V |
| W9412G2IB |
4Mx32 |
4 Banks |
-4 |
250 MHz |
CL3/CL4 |
2.5V ±0.1V |
Packaged in 144L LFBGA, using Lead free materials with RoHS compliant |
P |
Y |
| -5/-5I |
200 MHz |
CL3 |
2.5V±0.2V |
| -6/-6I |
166 MHz |
CL2.5 |
| * Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life, N=Not recommended for new design. |
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| 256Mb DDR |
| Part No. |
Organization |
Speed Grade |
Voltage |
Package |
Status* |
RoHS |
| W9425G6EH |
16Mx16 |
4 Banks |
-4 |
250 MHz |
CL3 |
2.6V ±0.1V |
Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant |
N |
Y |
| -5/-5I |
200 MHz |
|
2.5V ±0.2V? |
| -6/-6I |
166 MHz |
CL2.5 |
| W9425G6JH |
16Mx16 |
4 Banks |
-4 |
250 MHz |
CL3/CL4 |
2.4V~2.7V |
Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant |
P |
Y |
| -5/-5I |
200 MHz |
CL3 |
2.5V ±0.2V? |
| W9425G6JB |
16Mx16 |
4 Banks |
-5 |
200MHz |
CL3 |
2.5V ±0.2V |
Packaged in 60 Ball TFBGA, using lead free materials with RoHS compliant |
P |
Y |
| W9425G8EH |
32Mx8 |
4 Banks |
-5 |
200 MHz |
CL3 |
2.5V±0.2V |
Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant |
EOL |
Y |
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| 128Mb DDR2 |
| Part No. |
Organization |
Speed Grade |
Voltage |
Package |
Status* |
RoHS |
| W9712G6JB |
8Mx16 |
4 Banks |
-18 |
DDR2-1066 |
2007/7/7 |
1.8V±0.1V |
WBGA 84 Ball (8x12.5mm2), using Lead free materials with RoHS compliant |
P |
Y |
| -25/ 25I/25A |
DDR2-800 |
5-5-5/6-6-6 |
| -3 |
DDR2-667 |
2005/5/5 |
| W9712G8JB |
16Mx8 |
4 Banks |
-18 |
DDR2-1066 |
2007/7/7 |
1.8V±0.1V |
WBGA 60 Ball (8x12.5mm2), using Lead free materials with RoHS compliant |
P |
Y |
| -25 |
DDR2-800 |
5-5-5/6-6-6 |
| -3 |
DDR2-667 |
2005/5/5 |
| * Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life. |
| |
| 256Mb DDR2 |
| Part No. |
Organization |
Speed Grade |
CL-tRCD-tRP? |
Voltage |
Package |
Status* |
RoHS |
| W9725G6JB |
16Mx16 |
4 Banks |
-18 |
DDR2-1066 |
2007/7/7 |
1.8V±0.1V |
WBGA 84 Ball (8X12.5 mm2), using Lead free materials with RoHS compliant |
P |
Y |
| -25/ 25I/25A |
DDR2-800 |
5-5-5/6-6-6 |
| -3 |
DDR2-667 |
2005/5/5 |
| W9725G8JB |
32Mx8 |
4 Banks |
-18 |
DDR2-1066 |
2007/7/7 |
1.8V±0.1V |
WBGA 60 Ball (8X12.5 mm2), using Lead free materials with RoHS compliant |
P |
Y |
| -25/ 25I |
DDR2-800 |
5-5-5/6-6-6 |
| -3 |
DDR2-667 |
2005/5/5 |
| * Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life. |
| |
| 512Mb DDR2 |
| Part No. |
Organization |
Speed Grade |
CL-tRCD-tRP? |
Voltage |
Package |
Status* |
RoHS |
| W9751G6JB |
32Mx16 |
4 Banks |
-18 |
DDR2-1066 |
2007/7/7 |
1.8V±0.1V |
WBGA 84 Ball (8X12.5 mm2), using Lead free materials with RoHS compliant |
P |
Y |
| -25/25I |
DDR2-800 |
5-5-5/6-6-6 |
| -3 |
DDR2-667 |
2005/5/5 |
| W9751G8JB |
64Mx8 |
4 Banks |
-18 |
DDR2-1066 |
2007/7/7 |
1.8V±0.1V |
WBGA 60 Ball (8X12.5 mm2), using Lead free materials with RoHS compliant |
P |
Y |
| -25/25I |
DDR2-800 |
5-5-5/6-6-6 |
| -3 |
DDR2-667 |
2005/5/5 |
| * Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life. |
| |
| 1G DDR2 |
| Part No. |
Organization |
Speed Grade |
CL-tRCD-tRP? |
Voltage |
Package |
Status* |
RoHS |
| W971GG6JB |
64Mx16 |
8 Banks |
-18 |
DDR2-1066 |
2006/6/6 |
1.8V±0.1V |
WBGA 84 Ball (8x12.5mm2), using Lead free materials with RoHS compliant |
P |
Y |
| -25/25I |
DDR2-800 |
2005/5/5 |
| -3 |
DDR2-667 |
2005/5/5 |
| W971GG8JB |
128Mx8 |
8 Banks |
-18 |
DDR2-1066 |
2006/6/6 |
1.8V±0.1V |
WBGA 60 Ball (8x12.5mm2), using Lead free materials with RoHS compliant |
P |
Y |
| -25/25I |
DDR2-800 |
2005/5/5 |
| -3 |
DDR2-667 |
2005/5/5 |
| * Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life. |
| 2G DDR2 |
| Part No. |
Organization |
Speed Grade |
CL-tRCD-tRP? |
Voltage |
Package |
Status* |
RoHS |
| W972GG6JB |
128Mx16 |
8 Banks |
-18 |
DDR2-1066 |
2007/7/7 |
1.8V±0.1V |
WBGA 84 Ball (11x13mm2), using Lead free materials with RoHS compliant |
P |
Y |
| -25/25I |
DDR2-800 |
5-5-5/6-6-6 |
| -3 |
DDR2-667 |
2005/5/5 |
| W972GG8JB |
256Mx8 |
8 Banks |
-18 |
DDR2-1066 |
2007/7/7 |
1.8V±0.1V |
WBGA 60 Ball (11x11.5mm2), using Lead free materials with RoHS compliant |
P |
Y |
| -25/25I |
DDR2-800 |
5-5-5/6-6-6 |
| -3 |
DDR2-667 |
2005/5/5 |
| * Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life. |
