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同步动态随机存取内存 SDRAM

16Mb SDRAM
Part No. Organization   Speed Grade     Voltage Package Status* RoHS
W9816G6IB 1Mx16 2 Banks -6 166 MHz CL3 3.3V±0.3V Packaged in VFBGA 60 balls pitch=0.65mm, using Lead free materials with RoHS compliant P Y
-7 143 MHz 2.7V~3.6V
W9816G6IH 1Mx16 2 Banks -5 143 MHz CL2 3.3V±0.3V Package in 50-pin, 400 mil TSOP II, using Lead free materials with RoHS compliant P Y
200 MHz CL3
-6/-6I/-6A 166 MHz 3.3V±0.3V
-7/-7I 143 MHz 2.7V~3.6V
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life. 
64Mb SDRAM
Part No. Organization   Speed Grade     Voltage Package Status* RoHS
W9864G2GH 2Mx32 4 Banks -5 200 MHz CL3 3.3V±0.3V Packaged in TSOP II 86-pin (400 mil) using Pb free with RoHS compliant N Y
-6/-6I 166 MHz
-7  143 MHz 2.7V~3.6V
W9864G2IB 2Mx32 4 Banks -6 166 MHz CL3 3.3V±0.3V Packaged in TFBGA 90 ball(8x13mm2  ), using Lead free materials with RoHS compliant P Y
-7 143 MHz 2.7V~3.6V
W9864G2IH 2Mx32 4 Banks -5 200 MHz CL3 3.3V±0.3V Packaged in TSOP II 86-pin, using Lead free materials with RoHS compliant P Y
-6/-6I/-6A 166 MHz
-7  143 MHz 2.7V~3.6V
W9864G6IH 4Mx16 4 Banks -5 200 MHz CL3 3.3V±0.3V Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant P Y
-6/-6I/-6A 166 MHz
-7/-7S 143 MHz 2.7V~3.6V
W9864G6JH 4Mx16 4 Banks -5 200 MHz CL3 3.3V±0.3V Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant P Y
-6/-6I 166 MHz
-7/-7S 143 MHz 2.7V~3.6V
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life, N= None for new design.
128Mb SDRAM
Part No. Organization   Speed Grade     Voltage Package Status* RoHS
W9812G2IH 4Mx32 4 Banks -6C 166 MHz CL3 3.3V±0.3V Packaged in TSOP II 86-pin, using Lead free materials with RoHS compliant P Y
-6/-6I/-6A 2.7V~3.6V
-75 133 MHz
W9812G2IB 4Mx32 4 Banks -6/-6I/-6A 166 MHz CL3 2.7V~3.6V Packaged in TFBGA 90 Ball(8x13mm2 ), using Lead free materials with RoHS compliant P Y
-75 133 MHz
W9812G6IH 8Mx16 4 Banks -5 200 MHz CL3 3.3V±0.3V TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant P Y
-6/-6C/-6I/-6A 166 MHz
-75 133 MHz
W9812G6JH 8Mx16 4 Banks -5 200 MHz CL3 3.3V±0.3V TSOP II 54-pin, 400 mil using Lead free with RoHS compliant P Y
-6/-6I 166 MHz
-75 133 MHz
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.
256Mb SDRAM
Part No. Organization   Speed Grade     Voltage Package Status* RoHS
W9825G2DB 8Mx32 4 Banks -6 166 MHz CL3 3.3V±0.3V TFBGA 90 ball using Pb free with RoHS compliant P Y
-6I 2.7V~3.6V  
-75/75I 133 MHz
W9825G6EH 16Mx16 4 Banks -5 200MHz CL3 3.3V±0.3V Packaged in TSOP II 54-pin, 400 mil - 0.80, using Lead free materials with RoHS compliant P Y
-6/-6I/-6A 166 MHz
-6 133 MHz CL2
-75/75I/75A CL3
W9825G6JH 16Mx16 4 Banks -5 200MHz CL3 3.3V±0.3V Packaged in TSOP II 54-pin, 400 mil - 0.80, using Lead free materials with RoHS compliant P Y
-6/-6I 166 MHz
-6 133 MHz CL2
-75 CL3
* Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.
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